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Electronics and Communication Engineering (ECE) : Power Electronics - Quiz(MCQ)
The structure of the IGBT is a
A)
P-N-P structure connected by a MOS gate
B)
P-N-P-N structure connected by a MOS gate
C)
N-N-P-P structure connected by a MOS gate
D)
N-P-N-P structure connected by a MOS gate

Correct Answer : Option (B) :   P-N-P-N structure connected by a MOS gate


Explanation : The IGBT is a semiconductor device with four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS) gate structure without regenerative action.

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