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Electronics and Communication Engineering (ECE) : Power Electronics - Quiz(MCQ)
Which of the given device is a modern semiconductor device that combines the characteristics of MOSFET and BJT?
A)
IGBT
B)
SCR
C)
Schottky diode
D)
Microwave transistor

Correct Answer : Option (A) :   IGBT


Explanation : IGBT stands for Insulated Gate Bipolar Transistor. It includes the best features of power MOSFETS and power transistors(BJT). Same as a MOSFET, it has low input capacitance and high input impedance. In one state, it has low resistance and high current controlling capacity like a BJT.

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